THz oscillators based on intraband transitions in bulk semiconductors

Valery N. Shastin; R. Kh. Zhukavin; Andrei V. Muravjov; Ekaterina E. Orlova; Sergei G. Pavlov

doi:10.1117/12.361060

9 September 1999 THz oscillators based on intraband transitions in bulk semiconductors

Valery N. Shastin, R. Kh. Zhukavin, Andrei V. Muravjov, Ekaterina E. Orlova, Sergei G. Pavlov

Proceedings Volume 3828, Terahertz Spectroscopy and Applications II; (1999) https://doi.org/10.1117/12.361060
Event: Industrial Lasers and Inspection (EUROPTO Series), 1999, Munich, Germany

Abstract

The operating principles and experimental results concerning far-IR lasers based on the intersubband hot holes optical transitions in crossed electric and magnetic fields as well as on the optically excited intracenter shallow impurity states are reviewed and discussed. The analysis of the state of the art and the possible directions of the development of p-Ge hot hole intersubband transitions laser and the result of the recent theoretical and experimental investigations of new THz media based on impurity transitions in Si doped by phosphorus are presented.

Citation Download Citation

Valery N. Shastin, R. Kh. Zhukavin, Andrei V. Muravjov, Ekaterina E. Orlova, and Sergei G. Pavlov "THz oscillators based on intraband transitions in bulk semiconductors", Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999); https://doi.org/10.1117/12.361060

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