Structure of the Si-SiO2 interface

Kazimierz Jerzy Plucinski

doi:10.1117/12.344732

8 April 1999 Structure of the Si-SiO₂ interface

Kazimierz Jerzy Plucinski

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344732
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

The band bending fluctuation and tunneling models of the anomalous dispersion of the surface-state conductance curves are analyzed, based on the result of the analysis of oxidation process.

Citation Download Citation

Kazimierz Jerzy Plucinski "Structure of the Si-SiO₂ interface", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344732

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