SONOS sensor for measurement of gamma-ray irradiation

Wen-Ching Hsieh; Daniel Lee Hao-Tien; Hong-Sheng Xu

doi:10.1117/12.680860

30 August 2006 SONOS sensor for measurement of gamma-ray irradiation

Wen-Ching Hsieh, Daniel Lee Hao-Tien, Hong-Sheng Xu

Proceedings Volume 6319, Hard X-Ray and Gamma-Ray Detector Physics and Penetrating Radiation Systems VIII; 63190W (2006) https://doi.org/10.1117/12.680860
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

In comparison with traditional sensors, semiconductor dosimeters have certain advantages because of their high sensitivity, small sizes and weights and simple readout. However in case of the MOS type Gamma radiation sensors, stored dosage data was easily volatile at high temperature. A typical Si-Oxide-Nitride-Oxide-Si (SONOS) device processed by semiconductor technology can be a candidate for nonvolatile Gamma Radiation sensors. The Gamma ray radiation induces a significant decrease of threshold voltage for SONOS. The change of threshold voltage after Gamma ray expose can be correlated to the dose of Gamma ray exposure as well. This SONOS type of Gamma radiation sensor, has the following characteristics :(1) the stored dose recorded in this SONOS device is always nonvolatile during data read and write, even at high temperature. (2) Data in the SONOS can be erased to original null state by charges injection, but it can't be annealed by high temperature. (3) Data can be accumulatively stored in the SONOS.

Citation Download Citation

Wen-Ching Hsieh, Daniel Lee Hao-Tien, and Hong-Sheng Xu "SONOS sensor for measurement of gamma-ray irradiation", Proc. SPIE 6319, Hard X-Ray and Gamma-Ray Detector Physics and Penetrating Radiation Systems VIII, 63190W (30 August 2006); https://doi.org/10.1117/12.680860

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