Paper
11 June 1999 Polymeric base additives for lithographic improvement in DUV resist system
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Abstract
Recently, base additives have become indispensable ingredients in high resolution chemically amplified resists. These bases act as acid scavengers to extend shelf life for low activation systems such as ketal and acetal protected polyhydroxystyrene type rest. They are also used to improve contamination resistance for high activation resist system such as TBOC and t-butyl ester containing resins. Studies have also shown that base additives can reduce linewidth slimming and PEB sensitivity for acetal systems. Actually, one of the most important benefits of base additives is to limit acid diffusion and enhance chemical contrast during exposure and bake process, hence improving resolution and process latitudes. In this paper, we show that polymeric bases provide better litho performance than small compounds. In addition, hydroxides are found to be better than carboxylate salts and amines.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wu-Song Huang "Polymeric base additives for lithographic improvement in DUV resist system", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350154
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CITATIONS
Cited by 3 scholarly publications and 3 patents.
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KEYWORDS
Polymers

Diffusion

Lithography

Deep ultraviolet

Contamination

Chemically amplified resists

Photoresist materials

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