Footing reduction of positive deep-UV photoresists on plasma-enhanced ARL (PE ARL) SiON substrates

Lori Anne Joesten; Matthew L. Moynihan; Tracy K. Lindsay; Michael T. Reilly; Kathy Konjuh; David Mordo; Kenneth P. MacWilliams; Srini Sundararajan

doi:10.1117/12.312354

29 June 1998 Footing reduction of positive deep-UV photoresists on plasma-enhanced ARL (PE ARL) SiON substrates

Lori Anne Joesten, Matthew L. Moynihan, Tracy K. Lindsay, Michael T. Reilly, Kathy Konjuh, David Mordo, Kenneth P. MacWilliams, Srini Sundararajan

Author Affiliations +

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312354
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Chemically-amplified positive DUV photoresists are well known to exhibit small profile deviation at the resist substrate interface, commonly called footing, when processed on substrates like silicon oxynitride (SiON), titanium nitride, and boron phosphorous silicate glass. Severe footing can cause etch problems resulting in critical dimension nonuniformity and degraded lithographic performance. The objective of this paper is to examine possible solutions to footing on SiON substrates by focusing on three main areas: photoresist formulation, photoresist processing and substrate manipulation.

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Lori Anne Joesten, Matthew L. Moynihan, Tracy K. Lindsay, Michael T. Reilly, Kathy Konjuh, David Mordo, Kenneth P. MacWilliams, and Srini Sundararajan "Footing reduction of positive deep-UV photoresists on plasma-enhanced ARL (PE ARL) SiON substrates", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312354

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