Electron-beam direct writing technology for fine gate patterning

Kazuhiko Sato; Seiichiro Shirai; Hajime Hayakawa; Shinji Okazaki

doi:10.1117/12.309586

5 June 1998 Electron-beam direct writing technology for fine gate patterning

Kazuhiko Sato, Seiichiro Shirai, Hajime Hayakawa, Shinji Okazaki

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309586
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Electron beam (EB) lithography along with photo lithography is a good candidate for fabricating fine patterns smaller than 200 nm. We examined the pattern fidelity which was one of the most important points for applying EB lithography for proto-typing ULSIs. We used a direct writing EB system with a shaped beam. In this paper, we applied EB direct writing for the gate fabrication of 250-nm CMOS devices. The fidelity in resist patterns was 55 nm. The deviation was 21 nm, and the variation was +/- 17 nm. We also applied EB/DW and i-line exposure for the gate fabrication of 350-nm CMOS devices, and measured the source-drain current in nMOS transistors. We compared the Lg fluctuations which were calculated by Ids fluctuations. The magnitude of the fluctuations around Lg- equals 350 nm with EB/DW was less than half of that with i-line. According to these result, EB lithography is very effective for fabricating very fine gates of ULSIs.

Citation Download Citation

Kazuhiko Sato, Seiichiro Shirai, Hajime Hayakawa, and Shinji Okazaki "Electron-beam direct writing technology for fine gate patterning", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309586

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