Paper
13 June 1997 GaAs/AlGaAs complex structures examined by photoreflectance spectroscopy
G. Sek, Jan Misiewicz, Maria Kaniewska, Kazimierz Reginski, Jan Muszalski
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Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276212
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
We have measured the photoreflectance (PR) spectra at room and liquid nitrogen temperatures of two MBE grown GaAs/AlGaAs structures. The first one is HEMT type system with buried 10 periods of 2.5 micrometers GaAs/2.5nm AlGaAs superlattice. Oscillations-like signal associated with this SL have been observed and detailed analyzed. The second investigated structure is the sequence of 10 different quantum wells. Transitions in almost all wells and those associated with above barrier states have been observed. The experimental transitions are well described in terms of envelope function model.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Sek, Jan Misiewicz, Maria Kaniewska, Kazimierz Reginski, and Jan Muszalski "GaAs/AlGaAs complex structures examined by photoreflectance spectroscopy", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276212
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KEYWORDS
Gallium arsenide

Quantum wells

Stereolithography

Superlattices

Spectroscopy

Field effect transistors

Liquids

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