Paper
13 June 1997 2D hole gas in GaAs/(AlGa)As heterostructures investigated by photoreflectance spectroscopy
Piotr Sitarek, Jan Misiewicz, Ole Per Hansen
Author Affiliations +
Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276210
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland
Abstract
Photoreflectance technique is used to investigate two types of GaAs/(AlGa)As heterostructures with 2D hole systems: triangular and rectangular quantum wells. The attention is focused on the few extra features visible above FKO oscillations. This extra features are found as a result of the 2D holes presence in our structures.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Piotr Sitarek, Jan Misiewicz, and Ole Per Hansen "2D hole gas in GaAs/(AlGa)As heterostructures investigated by photoreflectance spectroscopy", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276210
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KEYWORDS
Quantum wells

Gallium arsenide

Heterojunctions

Interfaces

Spectroscopy

Beryllium

Temperature metrology

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