Point defects in CdTe crystals, doped with amphoteric elements

P. Fochouk; L. Yatsunyk; L. Shcherbak; O. Panchouk

doi:10.1117/12.280733

14 July 1997 Point defects in CdTe crystals, doped with amphoteric elements

P. Fochouk, L. Yatsunyk, L. Shcherbak, O. Panchouk

Proceedings Volume 3178, Solid State Crystals: Growth and Characterization; (1997) https://doi.org/10.1117/12.280733
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland

Abstract

High-temperature measurements at 973(673)K of electron (hole) concentration in Ge-doped CdTe crystals were performed under partial Cd and Te pressure. The results are compared with point-defect concentrations, calculated by use of approximated or full electroneutrality condition. The importance of the doped crystal thermal prehistory is evidenced. It determines the Ge in Cd sites to Ge in Te ones ratio, thus influences the electrical and optical properties of the crystal.

Citation Download Citation

P. Fochouk, L. Yatsunyk, L. Shcherbak, and O. Panchouk "Point defects in CdTe crystals, doped with amphoteric elements", Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); https://doi.org/10.1117/12.280733

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