Paper
7 July 1997 Sub-150-nm electron-beam lithography using AZPN114 chemically amplified resist
Zheng Cui, R. A. Moody, Ian M. Loader, John G. Watson, Philip D. Prewett
Author Affiliations +
Abstract
Chemically amplified resist AZPN114 from Hoechst has been extensively investigated for electron beam lithography at 150 nm resolution and below, using commercial e-beam lithography systems. Experimental design method was used to study the combined effect of pre and post exposure bake conditions on the performance of AZPN114 at 150 nm nominal linewidth. The effects of scanning field size of an e-beam system, the exposure energy, the resist thickness an pattern density, development conditions and post exposure delay have been investigated on resist sensitivity and resolution capability. One hundred nm resist lines with 7:1 aspect ratio and 50 nm resolution have been achieved using AZPN114 with optimized exposure and process conditions.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zheng Cui, R. A. Moody, Ian M. Loader, John G. Watson, and Philip D. Prewett "Sub-150-nm electron-beam lithography using AZPN114 chemically amplified resist", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275869
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Cited by 1 scholarly publication.
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KEYWORDS
Critical dimension metrology

Chemically amplified resists

Electron beam lithography

Photoresist processing

Electron beams

Lithography

Manufacturing

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