Photo-induced structural changes in near-surface layers of chalcogenide semiconductors

Ilze Manika; Janis Teteris

doi:10.1117/12.266847

6 February 1997 Photo-induced structural changes in near-surface layers of chalcogenide semiconductors

Ilze Manika, Janis Teteris

Proceedings Volume 2968, Optical Organic and Semiconductor Inorganic Materials; (1997) https://doi.org/10.1117/12.266847
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia

Abstract

Photoinduced structural changes in near-surface layers of amorphous As-Se and As-S films have been investigated using the microhardness method. Microhardness via indentation depth data for as-deposited, illuminated and aged in ambient atmosphere films is presented. The results obtained show that photoinduced increase in microhardness of surface layers up to approximately 1 - 1.5 micrometer are more pronounced in comparison with deeper layers. Increase in microhardness of the investigated films under exposure to atmosphere was also observed. Atmosphere-induced effect was more pronounced in the case of As-S films. Photo- and atmosphere-induced effects in the near-surface layers were found to be competitive. As a result, increase of the photoinduced effect in the microhardness of As-Se films and its decrease in the case of As-S films with decreasing indentation depth was observed. It was found that thermal stability of photo- and atmosphere-induced structural changes in near-surface layers are higher compared to volume ones.

Citation Download Citation

Ilze Manika and Janis Teteris "Photo-induced structural changes in near-surface layers of chalcogenide semiconductors", Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); https://doi.org/10.1117/12.266847

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