Relaxation processes in amorphous As-S and As-Se films

Janis Teteris

doi:10.1117/12.266846

6 February 1997 Relaxation processes in amorphous As-S and As-Se films

Janis Teteris

Proceedings Volume 2968, Optical Organic and Semiconductor Inorganic Materials; (1997) https://doi.org/10.1117/12.266846
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia

Abstract

The relaxation of optical, mechanical and chemical properties of as-evaporated amorphous As-S and As-Se films while storing them at room temperature is investigated. The As_xS_1-x films with arsenic content 0.3 less than x less than 0.4 are found to undergo maximal changes. It is shown that the phenomenon of dark self-enhancement of holograms (an increase of diffraction efficiency over time without any special treatment) can be used as an efficient method for investigation of relaxation processes in the amorphous chalcogenide films. The changes of diffraction efficiency in amorphous As₂S₃ films have been measured as a function of aging time and recording light intensity. The relaxation processes can be described by stretched exponential function often called as the Kohlraush-Williams-Watts function K(t) equals K₀ exp [-(t/(tau) _r)ⁿ] where (tau) _r is relaxation time of the process, n - a parameter, characterizing the relaxation process. It is assumed that the reason for the relaxation processes lies in internal mechanical stresses arising in the films during their preparation. A mechanism based on the photo-induced stress relaxation and viscous flow of amorphous semiconductor has been discussed.

Citation Download Citation

Janis Teteris "Relaxation processes in amorphous As-S and As-Se films", Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); https://doi.org/10.1117/12.266846

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