Challenges to depth-of-focus enhancement with a practical super-resolution technique

Tohru Ogawa; Masaya Uematsu; Koichi Takeuchi; Atsushi Sekiguchi; Tatsuji Oda

doi:10.1117/12.240934

7 June 1996 Challenges to depth-of-focus enhancement with a practical super-resolution technique

Tohru Ogawa, Masaya Uematsu, Koichi Takeuchi, Atsushi Sekiguchi, Tatsuji Oda

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240934
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

A new technique, which combines weak quadrupole illumination and an attenuated phase- shifting mask, has been developed. 0.03 micrometers lithography with i-line can be performed with this technique. It is also confirmed that KrF excimer laser lithography is a powerful candidate for generating 0.18 micrometers -rule devices.

Citation Download Citation

Tohru Ogawa, Masaya Uematsu, Koichi Takeuchi, Atsushi Sekiguchi, and Tatsuji Oda "Challenges to depth-of-focus enhancement with a practical super-resolution technique", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240934

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