Using optical pattern filtering defect inspection tools and process-induced defects per wafer pass for process defect control

John R. Alvis; Michael J. Satterfield; Patricia Gabella

doi:10.1117/12.240086

21 May 1996 Using optical pattern filtering defect inspection tools and process-induced defects per wafer pass for process defect control

John R. Alvis, Michael J. Satterfield, Patricia Gabella

Author Affiliations +

Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240086
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

A patterned wafer inspection system using optical pattern filtering (OPF) has been integrated into sub-half micron semiconductor device pilot production lines (125 mm and 200 mm) for the purpose of process defect control. The optical pattern filtering tool offers the advantages of 0.2 micrometer or better sensitivity with high throughput as compared to other patterned wafer inspection systems, and offers exceptional ability to find defects located deep inside the patterns of a typical device. This three dimensional capability offers unique capability when inspecting contacts or vias. A highly repetitive pattern must be used with the OPF tool. However, this limitation is easily overcome by using large highly repetitive arrays such as those found on DRAM or SRAM technologies. Additionally, the use of specially designed highly repetitive defect array masks such as a diffraction grating (comb) or a series of highly repetitive holes (vias and contacts) can be used.

Citation Download Citation

John R. Alvis, Michael J. Satterfield, and Patricia Gabella "Using optical pattern filtering defect inspection tools and process-induced defects per wafer pass for process defect control", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240086

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