Conception of optimal designing of optical column for ion projection lithography

Stanislav N. Jatchmenev; Alexander A. Chinenov

doi:10.1117/12.240498

27 May 1996 Conception of optimal designing of optical column for ion projection lithography

Stanislav N. Jatchmenev, Alexander A. Chinenov

Proceedings Volume 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI; (1996) https://doi.org/10.1117/12.240498
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

General theoretical schemes have been detailed for the designing of the ion projection lithography systems, using the results of preceding theoretical investigations. The designing is on the basis of simulation modeling by splitting off critical conditions and using known regularity of formation optical characteristics. The initial step of an investigation begins with the search of optimum configuration with respect to distortion as the most critical parameter. It is finding a corresponding configuration given reduction in the best way. Introduction of some additional degrees of freedom in two lenses projector makes tuning to required magnification coefficient possible. Then the problem of paraxiality for a system whole is solved. Large attention is given to research of the different collateral phenomena. Accounting all potential sources of perturbations is used for an individual tolerances. The contrast function is calculated for the required resolution.

Citation Download Citation

Stanislav N. Jatchmenev and Alexander A. Chinenov "Conception of optimal designing of optical column for ion projection lithography", Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); https://doi.org/10.1117/12.240498

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