Nd:YAG laser-induced damage on ultrathin silicon samples

Wolfgang Riede; Jerome B. Franck

doi:10.1117/12.240396

27 May 1996 Nd:YAG laser-induced damage on ultrathin silicon samples

Wolfgang Riede, Jerome B. Franck

Author Affiliations +

Proceedings Volume 2714, 27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995; (1996) https://doi.org/10.1117/12.240396
Event: Laser-Induced Damage in Optical Materials: 1995, 1995, Boulder, CO, United States

Abstract

The single shot laser induced damage onset and morphology of ultrathin silicon wafers is investigated using a Q-switched, single longitudinal and transverse mode Nd:YAG laser operating at 1.06 micrometers . The wafers had a thickness of 2.5 - 33 micrometers with identical front and back surface polish and <100> orientation. Comparisons are made for simultaneous front and back surface damage at the lowest level detectable surface modification. The morphology of laser damage on front and back surface due to the application of multiple shots on one site (N/1) at higher fluence values was also monitored. A scatter probe system consisting of a laser beam analyzer and a CCD array was used. It allowed the in-situ observation of the development of damage on the samples.

Citation Download Citation

Wolfgang Riede and Jerome B. Franck "Nd:YAG laser-induced damage on ultrathin silicon samples", Proc. SPIE 2714, 27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995, (27 May 1996); https://doi.org/10.1117/12.240396

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