Paper
26 January 2005 Laser-induced damage of single-crystalline silicon under different 1064-nm Nd:YAG laser modes
Author Affiliations +
Abstract
The Laser-induced damage behavior of single-Crystalline Silicon was investigated with a Nd:YAG laser at 1064nm under single-pulse mode and free-running mode. It was found that the damage behavior of the SCS showed strong dependence on the output mode of the incident laser. From the experimental and theoretical analysis, the damage mechanism under the two laser modes were given based on thermal and thermal-stress coupling models.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
WeiDong Gao, Meiqiong Zhan, Janda Shao, and Zhengxiu Fan "Laser-induced damage of single-crystalline silicon under different 1064-nm Nd:YAG laser modes", Proc. SPIE 5627, High-Power Lasers and Applications III, (26 January 2005); https://doi.org/10.1117/12.570313
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Laser induced damage

Modes of laser operation

Silicon

Nd:YAG lasers

Semiconductor lasers

Absorption

Laser damage threshold

Back to Top