Study of ferroelectric-superconductor field effect transistor

Naijuan Wu; H. Lin; T. Q. Huang; Scott D. Endicter; D. Liu; Alex Ignatiev

doi:10.1117/12.250264

5 July 1996 Study of ferroelectric-superconductor field effect transistor

Naijuan Wu, H. Lin, T. Q. Huang, Scott D. Endicter, D. Liu, Alex Ignatiev

Proceedings Volume 2697, Oxide Superconductor Physics and Nano-Engineering II; (1996) https://doi.org/10.1117/12.250264
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

A ferroelectric-superconducting three-terminal device consisting of a YBCO base layer and a PbZr_xTi_1-xO₃ (PZT) gate has been developed. This ferroelectric-superconductor field effect transistor has non-volatility and retention behavior based on the memory effect of the ferroelectric gate. The FSuFET was characterized both by an admittance spectroscopy and by DC I-V measurements after polarizing the PZT gate with both positive and negative pulses. The J_c modulation of the YBCO channel by the gate polarization field has been found greater than 90 percent. The retention time longer than 10⁶ seconds has also been obtained.

Citation Download Citation

Naijuan Wu, H. Lin, T. Q. Huang, Scott D. Endicter, D. Liu, and Alex Ignatiev "Study of ferroelectric-superconductor field effect transistor", Proc. SPIE 2697, Oxide Superconductor Physics and Nano-Engineering II, (5 July 1996); https://doi.org/10.1117/12.250264

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