Effect of dielectric polarization noise on ultralow-noise readout circuits

Makoto Akiba

doi:10.1117/12.409840

15 December 2000 Effect of dielectric polarization noise on ultralow-noise readout circuits

Makoto Akiba

Proceedings Volume 4130, Infrared Technology and Applications XXVI; (2000) https://doi.org/10.1117/12.409840
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

Dielectric polarization noise, which can be predicted by the fluctuation-dissipation theorem, is generated in materials that have dielectric loss. The materials around the gate circuit of an FET may generate dielectric polarization noise because these materials have dielectric loss. We measured the noise of both these materials and the devices, and fabricated an ultra-low-noise readout circuit by removing as many high-noise materials as possible and replacing the high-noise devices with lower-noise devices. The main noise sources in the circuit were the p-n junctions of the photodiode and the Si JFET, the feedback capacitor, and the electrode that connects them. A readout-noise level of ten electrons was achieved at 77 K using a photodiode with a capacitance below 1 pF.

Citation Download Citation

Makoto Akiba "Effect of dielectric polarization noise on ultralow-noise readout circuits", Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); https://doi.org/10.1117/12.409840

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