Paper
3 November 1995 Complex diagnostic of CdTe after under-threshold laser irradiation by photoluminescence, photoconductivity, and electrophysical methods
Vladimir N. Babentsov, Aleksandr I. Vlasenko, Peter E. Mozol', Elena P. Kopishinskaya
Author Affiliations +
Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226197
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
In this paper a complex diagnostic of impurities defects interaction as a result of irradiation by a ruby laser pulse of 20 ns duration has been made. Photoluminescence, photoconductivity, Raman scattering, microscopic and electrophysical methods were used to characterize the deviation from the stoichiometric composition, impurities activation and disactivation, tellurium layer and dislocations network creation. The mechanism of dislocations appearance as shown is mechanical stresses accumulated in laser irradiated area under the threshold of plasticity of the material.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir N. Babentsov, Aleksandr I. Vlasenko, Peter E. Mozol', and Elena P. Kopishinskaya "Complex diagnostic of CdTe after under-threshold laser irradiation by photoluminescence, photoconductivity, and electrophysical methods", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226197
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KEYWORDS
Tellurium

Luminescence

Cadmium

Laser irradiation

Diagnostics

Laser damage threshold

Ruby lasers

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