Spectral ellipsometry on patterned wafers

Duncan W. Mills; Ronald L. Allen; Walter M. Duncan

doi:10.1117/12.221311

19 September 1995 Spectral ellipsometry on patterned wafers

Duncan W. Mills, Ronald L. Allen, Walter M. Duncan

Proceedings Volume 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing; (1995) https://doi.org/10.1117/12.221311
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

Ellipsometry has seen only limited application to the post-deposition pattern etch process despite the fact that physical parameters such as groove width, depth and pitch are as critical to product performance as the more basic thin film parameters traditionally analyzed using ellipsometry. This paper presents initial theoretical results pertaining to modeling the reflectance from a 1D etched pattern on a semiconductor substrate. To analyze the sample's effects upon the incident beam polarization, we formulate the zeroth-order reflection coefficients for the orthogonal p and s polarization states and construct models of ellipsometric parameters (Psi and Delta) for a rectangular-groove surface pattern, emphasizing the effect of groove geometry upon these quantities.

Citation Download Citation

Duncan W. Mills, Ronald L. Allen, and Walter M. Duncan "Spectral ellipsometry on patterned wafers", Proc. SPIE 2637, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing, (19 September 1995); https://doi.org/10.1117/12.221311

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