In-situ Si wafer temperature measuring using pulse modulated infrared laser interferometric thermometry for CVD film deposition

Ryo Kurosaki; Jun Kikuchi; Yasuo Kobayashi; Yasuhiko Chinzei; Shuzo Fujimura; Yasuhiro Horiike

doi:10.1117/12.221454

22 September 1995 In-situ Si wafer temperature measuring using pulse-modulated infrared laser interferometric thermometry for CVD film deposition

Ryo Kurosaki, Jun Kikuchi, Yasuo Kobayashi, Yasuhiko Chinzei, Shuzo Fujimura, Yasuhiro Horiike

Author Affiliations +

Proceedings Volume 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis; (1995) https://doi.org/10.1117/12.221454
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

Wafer temperature in high rate and low bias RF boltage SiO₂ deposition process was monitored by pulse modulated infrared laser interferometric thermometry. With RF bias, wafer temperature sharply rose to more than 600 degree(s)C due to poor thermal conductivity between a silicon wafer and cooling stage which led to no SiO₂ deposition on silicon trenches. However, after improving the thermal conductivity, silicon trenches were successfully filled. Also, temperature dependence of fluorocarbon film deposition on a chamber wall in C₄F₈/H₂ inductively coupled plasma process was investigated. The result implies that wall temperature should be controlled over 300 degree(s)C in order to maintain CFx radical supply on SiO₂ surfaces.

Citation Download Citation

Ryo Kurosaki, Jun Kikuchi, Yasuo Kobayashi, Yasuhiko Chinzei, Shuzo Fujimura, and Yasuhiro Horiike "In-situ Si wafer temperature measuring using pulse-modulated infrared laser interferometric thermometry for CVD film deposition", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); https://doi.org/10.1117/12.221454

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