Experimental investigations of the electrical and photoelectrical characteristics of the two-channel bulk charge-coupled device

Vladimir I. Khainovskii; Valerii V. Uzdovskii

doi:10.1117/12.218629

8 September 1995 Experimental investigations of the electrical and photoelectrical characteristics of the two-channel bulk charge-coupled device

Vladimir I. Khainovskii, Valerii V. Uzdovskii

Author Affiliations +

Proceedings Volume 2551, Photoelectronic Detectors, Cameras, and Systems; (1995) https://doi.org/10.1117/12.218629
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

The electric characteristics of the linear two-channel bulk charge coupled device (BCCD) with an n-type surface channel and p-type bulk channel of conductivity, located one under another, have been investigated experimentally. The device has sixteen elements of decomposition. THe four-step diagram of control boltage pulses, providing synchronous contrary transfering of charge packages in the channels, has been used. The method of electron holding in the surface channel by the dc voltage of value approximately (- 10.5 divided by 11V) on the lateral electrodes has been proposed. The amplitude of negative control voltage pulses has varied in the interval 0 divided by - 20V with 99.76% of the efficiency of charge transferring at the frequency of 75 kHz in the both channels. In photoelectric measurements the essentially different spectral characteristics of BCCD channel photosensitivities have been found. The maximum of the n-channel photosensitivity falls on the approximately 0.75 micrometers wave length. In general, the principle possibility of a spectrozonal phototransformer creation based on the two-channel BCCD has been shown experimentally.

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Vladimir I. Khainovskii and Valerii V. Uzdovskii "Experimental investigations of the electrical and photoelectrical characteristics of the two-channel bulk charge-coupled device", Proc. SPIE 2551, Photoelectronic Detectors, Cameras, and Systems, (8 September 1995); https://doi.org/10.1117/12.218629

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KEYWORDS

Electrodes

Charge-coupled devices

Dielectrics

Channel projecting optics

Radiation effects

Semiconductors

Silicon

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