Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

G. I. Zebrev; M. S. Gorbunov; V. S. Pershenkov

doi:10.1117/12.802480

29 April 2008 Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

G. I. Zebrev, M. S. Gorbunov, V. S. Pershenkov

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 702517 (2008) https://doi.org/10.1117/12.802480
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

The sensitivity of sub-100 nm devices to microdose effects, which can be considered as intermediate case between cumulative total dose and single event errors, is investigated. A detailed study of radiation-induced leakage due to stochastic charge trapping in irradiated planar and nonplanar devices is developed. The influence of High-K insulators on nanoscale ICs reliability is discussed. Low critical values of trapped charge demonstrate a high sensitivity to single event effect.

Citation Download Citation

G. I. Zebrev, M. S. Gorbunov, and V. S. Pershenkov "Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702517 (29 April 2008); https://doi.org/10.1117/12.802480

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available