Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices

Mohamed Asif Khan; Q. Chen; C. J. Sun; Michael S. Shur; M. F. MacMillan; Robert P. Devaty; W. J. Choyke

doi:10.1117/12.206878

24 April 1995 Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices

Mohamed Asif Khan, Q. Chen, C. J. Sun, Michael S. Shur, M. F. MacMillan, Robert P. Devaty, W. J. Choyke

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206878
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

We describe the deposition and characterization of single layers, homo-heterojunctions and superlattices of the Al_xGa_1-xN and In_xGa_1-xN material systems. Measurements are discussed indicating of 2D electron gas at heterojunction interfaces. Several photonic devices such as UV detectors, quarter wave reflector stacks, light emitting diodes and optically pumped lasing cavities are also described.

Citation Download Citation

Mohamed Asif Khan, Q. Chen, C. J. Sun, Michael S. Shur, M. F. MacMillan, Robert P. Devaty, and W. J. Choyke "Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206878

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