InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon

P. Bhattacharya; A. Hazari; S. Jahangir

doi:10.1117/12.2252981

16 February 2017 InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon

P. Bhattacharya, A. Hazari, S. Jahangir

Proceedings Volume 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI; 101240H (2017) https://doi.org/10.1117/12.2252981
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. In_xGa_1-xN disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described.

Conference Presentation

Citation Download Citation

P. Bhattacharya, A. Hazari, and S. Jahangir "InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon", Proc. SPIE 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240H (16 February 2017); https://doi.org/10.1117/12.2252981

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