Growth of low and high refractive index dielectric films: an in situ ellipsometry study

Josette Rivory; S. Fisson; Jean Marc Frigerio; V. Nguyen Van; G. Vuye; Yangshu Wang; Florin Abeles

doi:10.1117/12.192074

4 November 1994 Growth of low and high refractive index dielectric films: an in situ ellipsometry study

Josette Rivory, S. Fisson, Jean Marc Frigerio, V. Nguyen Van, G. Vuye, Yangshu Wang, Florin Abeles

Proceedings Volume 2253, Optical Interference Coatings; (1994) https://doi.org/10.1117/12.192074
Event: 1994 International Symposium on Optical Interference Coatings, 1994, Grenoble, France

Abstract

Dielectric films exhibit very different and complex behaviors during thickness growth, leading generally to a variation of the refractive index in the depth of the film. Several causes of index inhomogeneity are examined: chemical interaction between film and substrate, transition layer, surface layer, etc. Their detection from in situ ellipsometric measurements is presented in the case of CaF₂, SiO₂ and TiO₂ films. Complementary techniques (XPS, HRTEM and AFM) have been used for assessment of realistic optical models.

Citation Download Citation

Josette Rivory, S. Fisson, Jean Marc Frigerio, V. Nguyen Van, G. Vuye, Yangshu Wang, and Florin Abeles "Growth of low and high refractive index dielectric films: an in situ ellipsometry study", Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); https://doi.org/10.1117/12.192074

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