High-power visible semiconductor lasers

Randall S. Geels; David F. Welch; David P. Bour; David W. Treat; Ross D. Bringans

doi:10.1117/12.172746

1 June 1994 High-power visible semiconductor lasers

Randall S. Geels, David F. Welch, David P. Bour, David W. Treat, Ross D. Bringans

Proceedings Volume 2115, Visible and UV Lasers; (1994) https://doi.org/10.1117/12.172746
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

High power visible semiconductor laser diodes are reported at wavelengths ranging from 620 nm to 690 nm. Broad area laser diodes exhibit peak cw output powers of 3.8 W from a 250 micrometers aperture at 688 nm and > 1 W cw at 636 nm from a 100 micrometers aperture. Monolithic 1 cm arrays with a 24% filling factor provide output powers of 30 W cw at 687 nm. Single mode lasers in the 620 nm wavelength band emit > 50 mW and operate at temperatures up to 80 degree(s)C.

Citation Download Citation

Randall S. Geels, David F. Welch, David P. Bour, David W. Treat, and Ross D. Bringans "High-power visible semiconductor lasers", Proc. SPIE 2115, Visible and UV Lasers, (1 June 1994); https://doi.org/10.1117/12.172746

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available