High-power AlGaInP visible laser diodes and arrays

Harvey B. Serreze; Y. C. Chen; Ari Rosenberg

doi:10.1117/12.59131

26 June 1992 High power AlGaInP visible laser diodes and arrays

Harvey B. Serreze, Y. C. Chen, Ari Rosenberg

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59131
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

High-power laser diodes operating in the wavelength range of 640 to 675 nm are described. Using a strained-layer, single quantum well, epitaxial structure in conjunction with oxide-stripe construction, CW power outputs of individual diodes in excess of 1 watt at 670 nm and over 450 mW at 640 nm have been achieved. These accomplishments were made possible by reducing the room temperature CW threshold current density to slightly over 300 A/sq cm at 670 nm and 560 A/sq cm at 640 nm. Measurements have also been made of spectral output, characteristic temperature, far-field intensity, operating lifetime, and internal laser parameters.

Citation Download Citation

Harvey B. Serreze, Y. C. Chen, and Ari Rosenberg "High power AlGaInP visible laser diodes and arrays", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59131

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