Elimination of stress-induced voids on AlCu multilevel interconnect lines

Gordon Grivna; John L. Freeman; Clarence J. Tracy

doi:10.1117/12.156518

15 September 1993 Elimination of stress-induced voids on AlCu multilevel interconnect lines

Gordon Grivna, John L. Freeman, Clarence J. Tracy

Proceedings Volume 2090, Multilevel Interconnection: Issues That Impact Competitiveness; (1993) https://doi.org/10.1117/12.156518
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

Multilevel metal (MLM) structures utilizing four layers of large grain size Al 1.5% Cu metallization have displayed `in process' stress voiding in metal layers two through four upon completion of final passivation and anneal. Changing the deposited dielectric stress from 2E8 dynes/cm² to a slightly more compressive 1.25E9 dynes/cm² eliminated the formation of `in process' stress voids. However, thermal stressing at 200 degree(s)C still produced stress voiding in metal layers two and three. The addition of a 125 angstrom TiW cap to the second, third, and fourth metal layer was shown to eliminate both `in process' stress voids and long term 200 degree(s)C thermal stress induced metal line voids on all material with standard dielectric thicknesses. The results comparing various dielectric stress levels and metal structures with and without a TiW cap are reported here.

Citation Download Citation

Gordon Grivna, John L. Freeman, and Clarence J. Tracy "Elimination of stress-induced voids on AlCu multilevel interconnect lines", Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); https://doi.org/10.1117/12.156518

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