Characterization of metal film reflectivity for implementaton into manufacturing

J. M. Perchard; Kathy E. Shaw; Mark Mueller

doi:10.1117/12.148939

4 August 1993 Characterization of metal film reflectivity for implementaton into manufacturing

J. M. Perchard, Kathy E. Shaw, Mark Mueller

Proceedings Volume 1926, Integrated Circuit Metrology, Inspection, and Process Control VII; (1993) https://doi.org/10.1117/12.148939
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

We have examined several metal films currently used in IC manufacturing and reported the results of reflectivity as a function of different processing parameters. The objective when characterizing a film to be used as an anti-reflective coating (ARC) is to locate and optimize the process window to achieve the minimum reflectance at the operating wavelength of a stepper. Reflectivity measurements as a function of thickness and process conditions, across broadband wavelengths, are presented. These results show the variation in minimum reflectance as a function of these variables. Various thicknesses of coherent titanium nitride (TiN) and titanium tungsten (TiW) films have been studied to understand the application of these films to interconnect metallization schemes as anti-reflective coatings. Additionally, a series of aluminum (Al) wafers are created to show the variation in measured absolute reflectivity as a function of process parameters. The aluminum deposition temperature was varied from 100 degree(s)C to 500 degree(s)C.

Citation Download Citation

J. M. Perchard, Kathy E. Shaw, and Mark Mueller "Characterization of metal film reflectivity for implementaton into manufacturing", Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); https://doi.org/10.1117/12.148939

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