Comparison study between tungsten and aluminum plug for submicrometer contact via manufacturing

Fang Hong Gn; Lianjun Liu; Michael Guo

doi:10.1117/12.186049

9 September 1994 Comparison study between tungsten and aluminum plug for submicrometer contact via manufacturing

Fang Hong Gn, Lianjun Liu, Michael Guo

Proceedings Volume 2335, Microelectronics Technology and Process Integration; (1994) https://doi.org/10.1117/12.186049
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Contact and via step coverage has always been an issue for aluminum metallization as device geometry continues to shrink. Conventional aluminum sputtering has failed to yield a reasonably good step coverage which is a potential reliability issue. Many efforts have been put in for the past years, which includes CVD tungsten, (both selective and blanket tungsten with etchback) and planarized aluminum to fill sub-micron contacts. The tungsten module requires additional process steps when it is to be integrated into the existing flow. Aluminum plug, on the other hand, is more attractive because of reduced process complexity and wafer cost. In this paper, we describe each module and present a comparison between various aspects of the W-plug, Al-plug and conventional cold aluminum modules. We have demonstrated the manufacturing capability of both W-plug and Al-plug for submicron contact/via process. We have also proven the Al-plug process for Chartered's 0.6 micrometers contact/via technology and believe that the Al-plug process has potential for future 0.5 micrometers contact/via technology.

Citation Download Citation

Fang Hong Gn, Lianjun Liu, and Michael Guo "Comparison study between tungsten and aluminum plug for submicrometer contact via manufacturing", Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); https://doi.org/10.1117/12.186049

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