Paper
15 September 1993 Comparison of liquid- and vapor-phase silylation processes for 193-nm positive-tone lithography
Mark A. Hartney, Roderick R. Kunz, Lynn M. Eriksen, Douglas C. LaTulipe
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Abstract
Liquid- and vapor-phase silylation processes are compared for a 193 nm positive-tone lithographic process using polyvinylphenol as a resist. The liquid-phase process, using a mixture of xylene, hexamethylcyclotrisilazane, and propylene glycol methyl ether acetate, was found to have higher silylation contrast, better sensitivity, and a smaller proximity effect (a decrease in silylation depth for smaller feature sizes). These factors result in a larger exposure latitude, particularly at feature sizes below 0.5 micrometers . These advantages are greatly offset, however, by the increased chemical costs, which are estimated to be more than 100 times greater than for the vapor-phase process.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark A. Hartney, Roderick R. Kunz, Lynn M. Eriksen, and Douglas C. LaTulipe "Comparison of liquid- and vapor-phase silylation processes for 193-nm positive-tone lithography", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154761
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Cited by 2 scholarly publications.
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KEYWORDS
Silicon

Liquids

Photoresist processing

Lithography

Semiconducting wafers

Signal processing

Chemical analysis

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