KrF bilayer resist defects: cause, analysis, and reduction

Brian Osborn; Gloria Quinto; Zhanping Zhang; Cherry Tang; Stacy Sakai; Go Nagatani; Anna Minvielle

doi:10.1117/12.773118

26 March 2008 KrF bilayer resist defects: cause, analysis, and reduction

Brian Osborn, Gloria Quinto, Zhanping Zhang, Cherry Tang, Stacy Sakai, Go Nagatani, Anna Minvielle

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 69232N (2008) https://doi.org/10.1117/12.773118
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Dual damascene processing for back end of the line (BEOL) layers can employ bilayer film stack approaches for lithographic patterning. These bilayer resist systems are more prevalent for KrF layers and have many unique characteristics, including silicon-containing photoresists and gap fill underlayer material that must also act as a bottom anti-reflective coating (BARC). Bilayer resists pattern for copper deposition; as such, defect levels are a critical concern, as any post-patterning bridging or residue defects can often times render an entire die inoperable due to electrical shorts or breaks. Here, two such defect types were found: missing resist patterns and resist residue. Through several experiments and with process optimization, the defect origins were elucidated and the defects themselves significantly reduced. This work will detail the examination, root causes and eventual elimination of these significant bilayer resist defects.

Citation Download Citation

Brian Osborn, Gloria Quinto, Zhanping Zhang, Cherry Tang, Stacy Sakai, Go Nagatani, and Anna Minvielle "KrF bilayer resist defects: cause, analysis, and reduction", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69232N (26 March 2008); https://doi.org/10.1117/12.773118

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