Preparation of single-domain KTiOAsO4 crystals for device application

Kevin L. K. Cheng; Lap-Tak A. Cheng; John D. Bierlein; W. Bindloss; Joseph C. Calabrese; J. Galperin; A. A. Ballman

doi:10.1117/12.149286

21 July 1993 Preparation of single-domain KTiOAsO4 crystals for device application

Kevin L. K. Cheng, Lap-Tak A. Cheng, John D. Bierlein, W. Bindloss, Joseph C. Calabrese, J. Galperin, A. A. Ballman

Proceedings Volume 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II; (1993) https://doi.org/10.1117/12.149286
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

We report here the crystal growth and characterization of single domain KTiOAsO₄ crystals suitable for devices application. The presence of inversion domains were established by various techniques including piezoelectric resonances and electrostatic toning. Techniques for removing these domains from as grown crystals were discussed.

Citation Download Citation

Kevin L. K. Cheng, Lap-Tak A. Cheng, John D. Bierlein, W. Bindloss, Joseph C. Calabrese, J. Galperin, and A. A. Ballman "Preparation of single-domain KTiOAsO4 crystals for device application", Proc. SPIE 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II, (21 July 1993); https://doi.org/10.1117/12.149286

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