Study on the high-field current transport mechanisms in thin SiOxNy films

Bing Liang Yang; Bai Yong Liu; D. N. Chen; Y. C. Cheng; HonLeung Kelvin Wong

doi:10.1117/12.47257

1 November 1991 Study on the high-field current transport mechanisms in thin SiO_xN_y films

Bing Liang Yang, Bai Yong Liu, D. N. Chen, Y. C. Cheng, HonLeung Kelvin Wong

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47257
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

A new model is proposed to explain the current transport behavior in thin thermally nitrided silicon oxide (SiO_xN_y) films. In this model it was suggested that there are four mechanisms for the current conduction, namely: a) direct electron injection from the cathode; b) current due to electron capturing of traps; c) re-emission of trapped electron; and d) the hole injection from the Si-substrate. The theoretical results of the new model, including the current enhancement and trapping ledge phenomena in the I-V characteristics of the insulators, agree well with the experiments. The influence of the external applied field and the electron traps on the current transport behaviors in the SiO_xN_y films were also discussed.

Citation Download Citation

Bing Liang Yang, Bai Yong Liu, D. N. Chen, Y. C. Cheng, and HonLeung Kelvin Wong "Study on the high-field current transport mechanisms in thin SiO_xN_y films", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47257

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