Paper
1 August 1991 Recent developments of x-ray lithography in Canada
Mohamed Chaker, Stephane Boily, A. Ginovker, Alain Jean, Jean-Claude Kieffer, P. P. Mercier, Henri Pepin, Pak Leung, John F. Currie, Hugues Lafontaine
Author Affiliations +
Abstract
An overview of current activities in Canada is reported, including x-ray lithography studies based on laser plasma sources and x-ray mask development. In particular, the application of laser plasma sources for x-ray lithography is discussed, taking into account the industrial requirement and the present state of laser technology. The authors describe the development of silicon carbide membranes for x-ray lithography application. SiC films were prepared using either a 100 kHz plasma-enhanced chemical vapor deposition (PECVD) system or a laser ablation technique. These membranes have a relatively large diameter (> 1 in.) and a high optical transparency (> 50%). Experimental studies on stresses in tungsten films deposited with triode sputtering are reported.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohamed Chaker, Stephane Boily, A. Ginovker, Alain Jean, Jean-Claude Kieffer, P. P. Mercier, Henri Pepin, Pak Leung, John F. Currie, and Hugues Lafontaine "Recent developments of x-ray lithography in Canada", Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); https://doi.org/10.1117/12.47340
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Cited by 3 scholarly publications.
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KEYWORDS
X-ray lithography

X-rays

Plasma

Silicon carbide

Photomasks

X-ray sources

Semiconducting wafers

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