Investigation on the effect of electron-beam acceleration voltage and electron-beam sharpness on 0.2-um patterns

Akemi Moniwa; Shinji Okazaki

doi:10.1117/12.47352

1 August 1991 Investigation on the effect of electron-beam acceleration voltage and electron-beam sharpness on 0.2-μm lines

Akemi Moniwa, Shinji Okazaki

Author Affiliations +

Proceedings Volume 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing; (1991) https://doi.org/10.1117/12.47352
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

The effect of electron beam acceleration voltage and beam sharpness upon process latitudes of 0.2 micrometers line fabrication is estimated by computer simulation. Process latitude refers to dose and development time latitudes whereby the proper resist profiles are obtained. The latitudes are compared for acceleration voltages of 30 and 50 keV; beam blurs of 0.0, 0.05, and 0.1 micrometers ; resist patterns on bare Si and on Si covered with W layer; and three categorized exposed pattern with different pattern densities. in the case of the bare Si substrate, even beams at 30 keV acceleration with 0.1 micrometers beam blur give proper process latitudes. Thus, the 0.2 micrometers lines can be fabricated at 30 keV acceleration with 0.1 micrometers beam blur. On the contrary, for the resist patterns on W layer, 50 keV is necessary. Moreover, in the case of the bare Si substrate, the higher acceleration voltage made the process latitude larger at each categorized pattern. However, for reducing proximity effects between different categorized patters, a sharper beam blur is more effective than a higher acceleration voltage.

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Akemi Moniwa and Shinji Okazaki "Investigation on the effect of electron-beam acceleration voltage and electron-beam sharpness on 0.2-μm lines", Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); https://doi.org/10.1117/12.47352

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