Paper
1 August 1991 Application of an electron-beam scattering parameter extraction method for proximity correction in direct-write electron-beam lithography
Rudolf M. Weiss, Robert M. Sills
Author Affiliations +
Abstract
Proximity correction schemes as used in electron beam lithography require the determination of electron scattering within the exposed resist and underlying substrate material. Scattering of an electron beam in a solid can be described by a double Gaussian function with coefficients (alpha) (forward scattering), (beta) (backward scattering), and (eta) E (ratio of energy deposition due to backscattering and forward scattering). These three coefficients are also referred to as 'proximity parameters.' This paper discussed proximity parameters mainly as a function of resist thickness. New experimental results are reported.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rudolf M. Weiss and Robert M. Sills "Application of an electron-beam scattering parameter extraction method for proximity correction in direct-write electron-beam lithography", Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); https://doi.org/10.1117/12.47356
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KEYWORDS
Scattering

Laser scattering

Manufacturing

X-ray lithography

X-rays

Backscatter

Lithography

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