Techniques for characterization of silicon penetration during DUV surface imaging

Peter Freeman; John F. Bohland; Edward K. Pavelchek; Susan K. Jones; Bruce W. Dudley; Stephen M. Bobbio

doi:10.1117/12.44450

1 July 1991 Techniques for characterization of silicon penetration during DUV surface imaging

Peter Freeman, John F. Bohland, Edward K. Pavelchek, Susan K. Jones, Bruce W. Dudley, Stephen M. Bobbio

Proceedings Volume 1464, Integrated Circuit Metrology, Inspection, and Process Control V; (1991) https://doi.org/10.1117/12.44450
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

Techniques commonly used to determine silicon penetration depth during deep UV surface imaging lithography are compared to a method referred to as plasma etch 'staining.' This methodology is described in detail and the results compared and correlated to Rutherford Backscattering Spectroscopy (RBS) and ellipsometric (film swelling) measurements. Effects of the staining parameters on the resulting silicon depth are also discussed.

Citation Download Citation

Peter Freeman, John F. Bohland, Edward K. Pavelchek, Susan K. Jones, Bruce W. Dudley, and Stephen M. Bobbio "Techniques for characterization of silicon penetration during DUV surface imaging", Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); https://doi.org/10.1117/12.44450

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