Extending electrical measurements to the 0.5 µm regime

Patrick M. Troccolo; Lynda Clark Hannemann-Mantalas; Richard A. Allen; Loren W. Linholm

doi:10.1117/12.44427

1 July 1991 Extending electrical measurements to the 0.5 μm regime

Patrick M. Troccolo, Lynda Clark Hannemann-Mantalas, Richard A. Allen, Loren W. Linholm

Proceedings Volume 1464, Integrated Circuit Metrology, Inspection, and Process Control V; (1991) https://doi.org/10.1117/12.44427
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

The purpose of this work was to extend the design criteria of electrical test structures to the half-micron linewidth region. At 0.5 micrometers , process limitations place constraints on the functionality and usefulness of electrical test structures based on conventional design criteria. In particular, small total variations from lens aberrations/distortions and proximity/corner rounding effects in the patterning of the smallest lines achievable (less than 0.5 micrometers ) can result in failure of the structure. This was particularly significant when orthogonal voltage taps at minimum design geometries were used. As geometries decrease in size and control over the process and equipment tightens, the intrinsic error in conventional structures increases as a percentage of the total measurement. The design criteria of these structures have been further modified and improved in order to address known lithographic limitations and establish a more process tolerant design. The resulting measurement precision accommodating these changes is discussed to provide the framework for achieving the highest practical performance attainable from both the test structure and the measurement system.

Citation Download Citation

Patrick M. Troccolo, Lynda Clark Hannemann-Mantalas, Richard A. Allen, and Loren W. Linholm "Extending electrical measurements to the 0.5 μm regime", Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); https://doi.org/10.1117/12.44427

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