Optimization design and experimental verification of a high-precision wafer carrier with high and low temperatures

Huiying Gao; Yang Liu; Ping Zhang

doi:10.1117/12.3026207

1 April 2024 Optimization design and experimental verification of a high-precision wafer carrier with high and low temperatures

Huiying Gao, Yang Liu, Ping Zhang

Author Affiliations +

Proceedings Volume 13082, Fourth International Conference on Mechanical Engineering, Intelligent Manufacturing, and Automation Technology (MEMAT 2023); 130821D (2024) https://doi.org/10.1117/12.3026207
Event: 2023 4th International Conference on Mechanical Engineering, Intelligent Manufacturing and Automation Technology (MEMAT 2023), 2023, Guilin, China

Abstract

The wafer carrier structure in semiconductor special device was designed and optimized in this study according to functional requirements of high-temperature heating and low-temperature cooling as well as planeness requirement of vacuum adsorption. The layout of vacuum absorption structure, high-temperature heating unit and low-temperature cooling unit was determined by calculation and simulation. The ultimate structure of wafer carrier was determined through experimental verification. Results showed that surface evenness of this wafer carrier is lower than 30μm in the temperature range of -65 ~ 300 °C and it meets the design requirement of temperature fluctuation lower than ± 5°C.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Huiying Gao, Yang Liu, and Ping Zhang "Optimization design and experimental verification of a high-precision wafer carrier with high and low temperatures", Proc. SPIE 13082, Fourth International Conference on Mechanical Engineering, Intelligent Manufacturing, and Automation Technology (MEMAT 2023), 130821D (1 April 2024); https://doi.org/10.1117/12.3026207

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