Prediction of lithographic performance upon the adjustment of EUV photoresist components by advanced contrast curve analysis

Eunkyoung Byun; Sukmin Kim; Seungwon Han; Jaehui Choe; Seongji Kwon; Junghoon Lee; Sam-Jong Choi

doi:10.1117/12.3009950

9 April 2024 Prediction of lithographic performance upon the adjustment of EUV photoresist components by advanced contrast curve analysis

Eunkyoung Byun, Sukmin Kim, Seungwon Han, Jaehui Choe, Seongji Kwon, Junghoon Lee, Sam-Jong Choi

Author Affiliations +

Proceedings Volume 12957, Advances in Patterning Materials and Processes XLI; 129571O (2024) https://doi.org/10.1117/12.3009950
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

With the continuous scaling down of device size, the development of photoresist materials with high sensitivity and low pattern roughness has become of greater importance in order to achieve finer pattern structure required for advanced next-generation devices. The major obstacle that delays the material development process is the difficulty in predicting the changes in pattern profile depending on exposure conditions, such as dose, illumination system and reticle type. Moreover, the prediction becomes more difficult for schemes with complex pattern structures, since there can be discrepancy in photo-activity of different resist components according to the variation in the amount of incoming light intensity. Herein, we demonstrate a method to estimate the lithographic performance of a photoresist material by advanced contrast curve analysis. With this method, we were able to identify the key photoresist component leading to discrepancy between the pillar pattern profiles at bock-center and block-edge, and apply to the design of the best performing NTD CAR-type photoresist for fine pillar pattern with improved pattern uniformity. This contrast curve analysis method allows efficient material screening by assessing the lithographic performance of different resist materials without actual pattern evaluation by electron microscopy. We expect that this method will greatly contribute to the acceleration of the material development process for next-generation devices.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Eunkyoung Byun, Sukmin Kim, Seungwon Han, Jaehui Choe, Seongji Kwon, Junghoon Lee, and Sam-Jong Choi "Prediction of lithographic performance upon the adjustment of EUV photoresist components by advanced contrast curve analysis", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129571O (9 April 2024); https://doi.org/10.1117/12.3009950

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