Presentation + Paper
10 April 2024 Inverse lithography mask design of displacement Talbot lithography enabled by optimization method
Zhixin Wang, Li Wang, Harun H. Solak
Author Affiliations +
Abstract
In this work we introduce an Inverse Lithography Mask Design (ILMD) framework for Displacement Talbot Lithography (DTL), an emerging photolithography technique utilized especially for various photonic applications. Image formation process in DTL differs from projection or proximity lithography techniques. In DTL, the printed pattern is generally not an “image” of the mask in any common sense of the word, as there exists a rather complex relationship between the mask and wafer patterns. This has prevented the use of DTL for printing patterns other than simple shapes such as circles or squares up to now, as there are no obvious solutions to even start from, like those that exist for projection or proximity methods. Our ILMD framework, powered by an optimization method overcomes this hurdle. It takes a targeted wafer pattern as the input and yields potential mask geometries as the output. To verify the efficacy of the ILMD framework, we designed DTL masks for a variety of complex geometries. We realized a number of the resulting mask layouts using standard fabrication methods and used them in DTL exposures to print the intended patterns. The validity and accuracy of the ILMD framework was confirmed by SEM imaging of the printed patterns. This work proves the general capability of DTL’s underlying optical principles to produce complex periodic patterns. It significantly broadens the application scope of the DTL technique by providing a practical and efficient design route.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Zhixin Wang, Li Wang, and Harun H. Solak "Inverse lithography mask design of displacement Talbot lithography enabled by optimization method", Proc. SPIE 12954, DTCO and Computational Patterning III, 129540M (10 April 2024); https://doi.org/10.1117/12.3010197
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KEYWORDS
Semiconducting wafers

Lithography

Design

Optical lithography

Augmented reality

Scanning electron microscopy

193nm lithography

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