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Power-efficient thermo-optic phase shifters have been demonstrated using 3 μm thick silicon on insulator (SOI) waveguides fabricated on cavity-SOI wafers. In cavity-SOI the cavities are premade in the SOI wafer which simplifies the processing of the waveguides with thermally insulated heater structures. Measurement results of asymmetric Mach-Zehnder interferometric TO switches show a 10-fold decrease in required power for α π phase shift in devices fabricated on cavity-SOI when compared to devices fabricated on plain SOI. With the cavities the required heating power for the π phase shift is only 2.1 mW. Numerical simulations support the experimental results.
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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Päivi Heimala, Mikko Harjanne, Somnath Paul, Markku Kapulainen, Fei Sun, Juha Larismaa, Timo Aalto, "Power-efficient thermo-optic phase shifters with cavity-SOI," Proc. SPIE 12891, Silicon Photonics XIX, 128910G (12 March 2024); https://doi.org/10.1117/12.3002326