Comparison of electrical and optical characterization in Cu-gettered, semi-insulating GaAs

Thomas E. Zirkle; Nam Soo Kang; Dieter K. Schroder; Ronald J. Roedel

doi:10.1117/12.20797

1 October 1990 Comparison of electrical and optical characterization in Cu-gettered, semi-insulating GaAs

Thomas E. Zirkle, Nam Soo Kang, Dieter K. Schroder, Ronald J. Roedel

Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20797
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

We have compared electrically and optically determined microscopic and macroscopic material parameters in Cu-doped, semi-insulating (SI) GaAs as a function of gettering. We find significant changes in the panchromatic scanning electron microscope room temperature cathodoluminescence (CL) images obtained before and after Cu contamination of undoped SI-GaAs. Electrical and optical measurements also indicate significant changes. These measurements include thermally stimulated current (TSC), Fourier infrared transform spectroscopy (FTIR), and photoconductive spectroscopy. After gettering by mechanical damage and subsequent heat treatment, the electrical characteristics revert to their pre-doping characteristics, indicating successful gettering.

Citation Download Citation

Thomas E. Zirkle, Nam Soo Kang, Dieter K. Schroder, and Ronald J. Roedel "Comparison of electrical and optical characterization in Cu-gettered, semi-insulating GaAs", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20797

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