Paper
1 June 1990 Considering Babinet principle for optical lithography resolution limit exceeding classical resolving power
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Abstract
A point of view concerning optical lithography resolution limit when moving into submicron domain is proposed. This is intended as a reevaluation of the classical resolving power definition considering not only the apperture (pattern) size but also its polarity and aspect ratio. Printing of aperture with opposite polarities is described in terms of Babinet Principle a theorem concerning distribution of light diffracted by complementary screens. Validity of the Babinet Principle is verified for optical image intensity profiles obtained from complementary appertures illuminated in aftimage Reversal process as well as for final resist " opaque" and " window" patterns. Experiments made with a test reticle having 1D/2D structures in two polarities establish a possible validity range for Babinet Principle in optical lithography and a consequent resolution limit of 0. 5 0. 6 microns. 1.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mircea V. Dusa, Dan V. Nicolau, and Florin Fulga "Considering Babinet principle for optical lithography resolution limit exceeding classical resolving power", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); https://doi.org/10.1117/12.20220
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KEYWORDS
Image processing

Opacity

Optical lithography

Photoresist processing

Spectral resolution

Optical resolution

Image resolution

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