Focused ion-beam-assisted deposition of tungsten

Yuichi Madokoro; Tsuyoshi Ohnishi; Tohru Ishitani

doi:10.1117/12.20174

1 May 1990 Focused ion-beam-assisted deposition of tungsten

Yuichi Madokoro, Tsuyoshi Ohnishi, Tohru Ishitani

Proceedings Volume 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX; (1990) https://doi.org/10.1117/12.20174
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

Formation of fine conductive layer patterns by focused ion beam ( FIB ) using tungsten hexacarbonyl [W(CO)6] has been carried out to study its deposition mechanism. The effects of beam current density on the deposition rate, using a chamber-type gas delivery system and a nozzle-type system has been investigated and compared. It is found that the amount of dependence of deposition yield on current density differs between the two systems. In addition, the difference in gas pressures of the two systems cause different compositions of the deposits.

Citation Download Citation

Yuichi Madokoro, Tsuyoshi Ohnishi, and Tohru Ishitani "Focused ion-beam-assisted deposition of tungsten", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); https://doi.org/10.1117/12.20174

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