PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Finely focused ion beams have been used for repair of defects in photomasks and X-ray masks either by sputter removal of excess absorber material or by deposition of new absorber material. These mask structures employ polycrystalline metal absorbers with grain sizes in the 0.1 micrometers range. As feature dimensions are pushed downward, the effects of these grains become more important. A great deal of roughness can occur during FIB sputter removal of excess absorber for defect repair due to ion channeling and the resulting spatially nonuniform sputtering. In this paper, we describe a method for reducing the roughness in defect repair for Tungsten X-ray masks using chemically assisted FIB etching and a Cr/W/Cr multilayer mask structure.
Lloyd R. Harriott,R. R. Kola, andGeorge K. Celler
"Chemically assisted focused-ion-beam etching for tungsten x-ray mask repair", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146534
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Lloyd R. Harriott, R. R. Kola, George K. Celler, "Chemically assisted focused-ion-beam etching for tungsten x-ray mask repair," Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146534