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4 April 2023 Study on energy band regulation of field-assisted GaSb photocathode
Jinjuan Du, Zhifeng Xu, Yang Li, Linyu Gan, Haoyu Wu, Peng Chen
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Proceedings Volume 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications; 126174S (2023) https://doi.org/10.1117/12.2666386
Event: 9th Symposium on Novel Photoelectronic Detection Technology and Applications (NDTA 2022), 2022, Hefei, China
Abstract
Silvaco simulation software was used to study the influence of applied bias on the energy band of field-assisted GaSb/GaAs photocathode under different thicknesses and p-type doping concentrations of GaAs emission layer. The simulation results demonstrated that only 2V applied bias voltage can perfectly eliminate the barrier at the heterojunction interface and will not cause a large dark current when the GaSb layer was p-type with the doping concentration of 1×1019 cm-3 and the GaAs emission layer was gradient doping. The GaAs emitting layer with gradient doping consists of a GaAs layer with a thickness of 0.2 μm and a doping concentration of 1×1016 cm-3, GaAs layer with a thickness of 0.2 μm and a doping concentration of 1×1017 cm-3, and GaAs layer with a thickness of 0.2 μm and a doping concentration of 1×1018 cm-3. This simulation study provides theoretical guidance for the preparation of field-assisted GaSb/GaAs photocathode.
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Jinjuan Du, Zhifeng Xu, Yang Li, Linyu Gan, Haoyu Wu, and Peng Chen "Study on energy band regulation of field-assisted GaSb photocathode", Proc. SPIE 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications, 126174S (4 April 2023); https://doi.org/10.1117/12.2666386
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KEYWORDS
Gallium arsenide
Doping
Gallium antimonide
Heterojunctions
Conduction bands
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